EV Extral Fast Charging Piles DC-DC High Power Interleaved LLC Topologies Fast Recovery Diode Frd Osg60r030hzf To247 Power Mosfet

EV Extral Fast Charging Piles DC-DC High Power Interleaved LLC Topologies Fast Recovery Diode Frd Osg60r030hzf To247 Power Mosfet

US$0.20 660 Pieces (MOQ)

Basic Info.

Model NO.
OSG60R030HZF TO247
Cooling Method
Air Cooled Tube
Function
Microwave Transistor, Switch Transistor
Working Frequency
High Frequency
Structure
Planar
Encapsulation Structure
Plastic Sealed Transistor
Power Level
Medium Power
Material
Silicon
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Applications
PC Power
Industries
LED Lighting
Type
Fast EV Charging Station
Warranty
24 Months
Transport Package
Carton
Specification
TO247
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20K/Monthly

Packaging & Delivery

Package Size
59.00cm * 34.00cm * 15.00cm
Package Gross Weight
18.000kg

Product Description

Product Description General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features Low RDS(ON) & FOM Extremely low switching loss Excellent stability and uniformity Ultra-fast and robust body diode
Applications PC power Telecom power Server power EV Charger Motor driver
Key Performance Parameters
Parameter Value Unit
VDS, min @ Tj(max) 650 V
ID, pulse 240 A
RDS(ON), max @ VGS=10V 30
Qg 178 nC

Marking Information
Product Name Package Marking
OSG60R030HZF TO247 OSG60R030HZ
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Parameter Symbol Value Unit
Drain-source voltage VDS 600 V
Gate-source voltage VGS ±30 V
Continuous drain current1), TC=25 °C
ID
80
A
Continuous drain current1), TC=100 °C 50
Pulsed drain current2), TC=25 °C ID, pulse 240 A
Continuous diode forward current1), TC=25 °C IS 80 A
Diode pulsed current2), TC=25 °C IS, pulse 240 A
Power dissipation3), TC=25 °C PD 480 W
Single pulsed avalanche energy5) EAS 2500 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 50 V/ns
Operation and storage temperature Tstg, Tj -55 to 150 °C

Thermal Characteristics
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.26 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source breakdown voltage BVDSS 600 V VGS=0 V, ID=1 mA
Gate threshold voltage VGS(th) 3.0 4.5 V VDS=VGS, ID=2 mA,

Drain-source
on-state resistance

RDS(ON)
0.028 0.030
Ω
VGS=10 V, ID=40 A
0.058 VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current
IGSS
100
nA
VGS=30 V
-100 VGS=-30 V
Drain-source leakage current IDSS 10 μA VDS=600 V, VGS=0 V
Gate resistance RG 2.1 Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss 9343 pF
VGS=0 V, VDS=50 V, ƒ=100 KHz
Output capacitance Coss 708 pF
Reverse transfer capacitance Crss 15 pF
Effective output capacitance, energy related Co(er) 345 pF
VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related Co(tr) 1913 pF
Turn-on delay time td(on) 52.1 ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time tr 105.2 ns
Turn-off delay time td(off) 125.7 ns
Fall time tf 4.1 ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg 177.9 nC
VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge Qgs 37.4 nC
Gate-drain charge Qgd 78.4 nC
Gate plateau voltage Vplateau 6.2 V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD 1.4 V IS=80 A, VGS=0 V
Reverse recovery time trr 186.6 ns
IS=40 A,
di/dt=100 A/μs
Reverse recovery charge Qrr 1.6 μC
Peak reverse recovery current Irrm 15.4 A

Note Calculated continuous current based on maximum allowable junction temperature. Repetitive rating; pulse width limited by max. junction temperature. Pd is based on max. junction temperature, using junction-case thermal resistance. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.

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